Copper diffusion in TaN-based thin layers
S. G. Fries, J. Nazon, B. Fraisse, J. Sarradin, N. Frety, J. C. Tedenac.
Applied Surface Science, Elsevier Science BV, 254, 5670-5674, (2008)
The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.
Keyword(s): tantalum nitride; reactive sputtering; microstructure; diffusion; in situ glancing analysis