ICAMS / Interdisciplinary Centre for Advanced Materials Simulation


How nanoscale dislocation reactions govern low temperature and high stress creep of Ni-base single crystal superalloys

D. Bürger, A. Dlouhy, K. Yoshimi, G. Eggeler.

Crystals, 10, 134, (2020)

The present work investigates γ-channel dislocation reactions, which govern low-temperature (T = 750 °C) and high-stress (resolved shear stress: 300 MPa) creep of Ni-base single crystal superalloys (SX). It is well known that two dislocation families with different b-vectors are required to form planar faults, which can shear the ordered γ’-phase. However, so far, no direct mechanical and microstructural evidence has been presented which clearly proves the importance of these reactions. In the mechanical part of the present work, we perform shear creep tests and we compare the deformation behavior of two macroscopic crystallographic shear systems [011¯](111) and [112¯](111) . These two shear systems share the same glide plane but differ in loading direction. The [112¯](111) shear system, where the two dislocation families required to form a planar fault ribbon experience the same resolved shear stresses, deforms significantly faster than the [011¯](111) shear system, where only one of the two required dislocation families is strongly promoted. Diffraction contrast transmission electron microscopy (TEM) analysis identifies the dislocation reactions, which rationalize this macroscopic behavior.

Keyword(s): dislocation reactions; single crystal Ni-base superalloys; shear creep testing; transmission electron microscopy; nucleation of planar fault ribbons
Cite as: https://www.mdpi.com/2073-4352/10/2/134
DOI: 10.3390/cryst10020134
Download BibTEX

« back