ICAMS / Interdisciplinary Centre for Advanced Materials Simulation
more conferences »


Charge and spin noise in InAs quantum dots

Date: 05.11.2013
Time: 04:40 p.m.
Place: Materials Day 2013, Ruhr-Universität Bochum, Bochum, Germany

Arne Ludwig, Ruhr-Universität Bochum, Bochum, Germany

Today, the application of quantum dots in semiconductors as sources of quantum light is limited by material imperfections leading to noise even in samples of highest material quality. The spectral linewidths are broadened due to this noise and the ultimate goal to use solid state quantum dots as single photon emitters for quantum information networks is not reached.

We investigate local noise in a semiconductor by measuring the resonant fluorescence on a single InAs quantum dot. By separating the spectral contributions of noise, we find the main contributions are nuclear spin noise and noise of fluctuating charges.

« back