Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
Z. Xu, F. Fang, L. Liu, Z. He, D. Tian, A. Hartmaier, J. Zhang, X. Luo, M. Rommel, K. Nordlund, G. Zhang.
The International Journal of Advanced Manufacturing Technology, Springer London, 106, 3869–3880, (2020)
Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.
Keyword(s): diamond turning; silicon carbide; phase transformation; surface integrity; MD simulation; ion beam machining
Cite as: https://link.springer.com/article/10.1007/s00170-019-04886-6#citeas