Tunability of the piezoelectric fields in strained III-V semiconductors
R. Garg, A. Hüe, V. Haxha, M. A. Migliorato, T. Hammerschmidt, G. P. Srivastava.
Applied Physics Letters, 95, 041912,1-3, (2009)
In this work we show that tetragonal strain can be used to create a sign reversal of the piezoelectric field in InAs/GaAs semiconductor heterostructures. The strain dependence of the internal displacement of the cation-anion pairs and of the bond polarity are taken into account, beyond the linear model, within an ab initio scheme. The reported tunability of the piezoelectric field is a concept that can be exploited in optoelectronic devices.