ICAMS / Interdisciplinary Centre for Advanced Materials Simulation

Publications

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

J. Wu, Z. Xu, L. Liu, A. Hartmaier, M. Rommel, K. Nordlund, T. Wang, R. Janisch, J. Zhao.

Journal of Materials Chemistry C, Royal Society of Chemistry (RSC),, 9, 2258–2275, (2021)

Abstract
MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing. Establishing an atomic-scale theoretical model for p-type doping by Al ion implantation will significantly contribute to improved understanding of defect formation mechanisms during ion implantation doping of the third-generation semiconductor material SiC.


DOI: 10.1039/d0tc05374k
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