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Efficient light emission from hexagonal SiGe

E. M. T. Fadaly, J. R. Suckert, D. Ziss, M. A. J. von Tilburg, C. Mao, Y. Ren, V. T. von Lange, S. Köling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangel, J. J. Finley, S. Botti, J. E. M. Haverkort, E. P. A. M. Bakkers

IEEE Silicon Nanoelectronics Workshop (SNW), 1 - 2, (2021)

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Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si 1-x Ge x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.651-x Ge x alloys have been fabricated and efficient light emission has been observed.

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