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Efficient light emission from hexagonal SiGe
Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si 1-x Ge x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.651-x Ge x alloys have been fabricated and efficient light emission has been observed.