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Towards a hexagonal SiGe semiconductor laser

M. A. J. V. Tilburg, A. Dijkstra, E. M. T. Fadaly, V. T. V. Lange, M. A. Verheijen, J. R. Suckert, C. Rödl, J. Furthmüller, F. Bechstedt, S. Botti, D. Busse, J. J. Finley, E. P. A. M. Bakkers, J. E. M. Haverkort

Conference on Lasers and Electro-Optics (CLEO), 1 - 2, (2020)

Download: BibTEX

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

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