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Microscopic insights on field induced switching and domain wall motion in orthorhombic ferroelectrics

R. Khachaturyan, Y. Yang, S. Teng, B. Udofia, M. Stricker, A. Grünebohm

Physical Review Materials, 8, 024403, (2024)

DOI: 10.1103/physrevmaterials.8.024403

Download: BibTEX

Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study these processes, we combine ab initio-based molecular dynamics simulations and data science on the prototypical material BaTiO3. We reveal two different field regimes: For moderate field strengths, the switching is dominated by domain wall motion, while a fast bulklike switching can be induced for large fields. Switching in both field regimes follows a multistep process via polarization directions perpendicular to the applied field. In the former case, the moving wall is of Bloch character and hosts dipole vortices due to nucleation, growth, and crossing of two-dimensional 90∘ domains. In the second case, the local polarization shows a continuous correlated rotation via an intermediate tetragonal multidomain state.

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{"type":"article", "name":"r.khachaturyan20242", "author":"R. Khachaturyan and Y. Yang and S. Teng and B. Udofia and M. Stricker and A. Grünebohm", "title":"Microscopic insights on field induced switching and domain wall motion in orthorhombic ferroelectrics", "journal":"Physical Review Materials", "volume":"8", "OPTnumber":"2", "OPTmonth":"2", "year":"2024", "OPTpages":"024403", "OPTnote":"", "OPTkey":"ferroelectrics; domain wall motion; orthorhombic; molecular dynamics; effective Hamiltonian; data science;", "DOI":"10.1103/physrevmaterials.8.024403"}
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