ICAMS / Interdisciplinary Centre for Advanced Materials Simulation
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Grain boundary and triple junction diffusion in nanocrystalline copper

M. Wegner, J. Leuthold, M. Peterlechner, X. Song, S. V. Divinski, G. Wilde.

Journal of Applied Physics, AIP Publishing LLC, New York, 116, 093514, (2014)

Abstract
Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, 〈d〉, of ∼35 and ∼44 nm produced by spark plasma sintering were investigated by the radiotracer method using the 63 Ni isotope. The measured diffusivities, Deff , are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500⋅Dgb within the temperature interval from 420 K to 470 K.


DOI: 10.1063/1.4893960
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